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Your search returned 22 records. Click on the hyperlinks to view further details of Titles.. |
Magazine Name : Ieee Transactions On Electron Devices
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Year : 1998 Volume number : 45 Issue: 06 |
Aquasi-Two-Dimensional Hemt Model For Dc And Microwave Simulation
(Article)
Subject:
Hemt
,
Microwave
,
Modeling
,
Simulation
Author:
Ranjit
Singh
Christopher M.
Snowden
page:
1165
-
1169
On The Possible Effects Of Algaasb Growth Parameters On The 2-Deg Concentration In Algaasb/Ingaasb/Algaasb Qw'S
(Article)
Subject:
Compound Semiconductors
,
Modfet
,
Quantum Wells
,
Semiconductor Heterojunctions
Author:
A F M
Anwar
R T
Webster
page:
1170
-
1175
Single-Voltage-Supply Highly Efficient E/D Dual-Gate Pseudomorphic Double-Hetero Hemt'S With Platinum Buried Gates
(Article)
Subject:
Dual Gate
,
Fet'S
,
Hpa
Author:
Takuma
Tanimoto
Isao
Ohbu
Satoshi
Tanaka
page:
1176
-
1182
Gaas Gate Hjfet'S Fabricated Using Two-Step Dry-Etching And Selective Mombe Growth Techniques
(Article)
Subject:
Crystals
,
Modfets
,
Plasma
,
Processing Application
Author:
Shigeki
Wada
Naoki
Furuhata
Tadashi
Maeda
page:
1183
-
1189
Thermal Behavior Depending On Emitter Finger And Substrate Configurations In Power Heterojunction Bipolar Transistors
(Article)
Subject:
Power Heterojunction Bipolar Transistors
,
Thermal Analysis
,
Thermal Resistance
Author:
Chang-Woo
Kim
Norio
Goto
Kazuhiko
Honjo
page:
1190
-
1195
High Efficiency And High Linearity Ingap/Gaas Hbt Power Amplifiers Matching Techniques Of Source And Load Impedance To Improve Phase Distortion And Linearity
(Article)
Subject:
Adjacent Channel Leakage Power
,
Linearity
,
Phase Distribution
,
Power Amplifier
Author:
Taisuke
Iwai
S
Ohara
Hiroshi
Yamada
Y
Yamaguchi
page:
1196
-
1200
1/F Noise In Ingaas/Gaas Linear Graded Buffer Layers
(Article)
Subject:
Buffer Layer
,
Dislocation
,
Grain Boundaries
,
Scattering
Author:
Juan Francisco
Valtuefia
Jose Antonio
Garrido
Jose Ignacio
Izpura
page:
1201
-
1206
Avalanche Multiplication In Galnp/Gaas Single Heterojunction Bipolar Transistors
(Article)
Subject:
Avalanche Breakdown
,
Gallium Compounds
,
Transistor Array
,
Semiconductors
Author:
Richard M.
Flitcroft
J P R
David
Peter A.
Houston
page:
1207
-
1212
Effects Of Inelastic Scattering On Interband Tunneling In Gasb/Alsb/Inas Broken-Gap Interband Tunneling Structures
(Article)
Subject:
Effects Of Initial F- Concentration
,
Tunneling
,
Broken Bars
Author:
Maochang
Liu
Yeong-Her
Wang
Mau-Phon
Houng
page:
1213
-
1218
Low-Frequency Noise Properties Of Selectively Dry Etched Inp Hemt'S
(Article)
Subject:
Modfets
,
Indium Materials/Devices
,
Noise
Author:
Halit C.
Duran
Lin
Ren
Marc
Iiegems
page:
1219
-
1225
A Detailed Phsical Model For Ion Implant Induced Damage In Silicon
(Article)
Subject:
Implant-Induced Damage
,
Ion Implantation
,
Modeling
Author:
Charles M.
Snell
Marc
Iiegems
Geng
Wang
page:
1226
-
1238
A Physical Model For Threshold Voltage Instability In Si3n4-Gate H -Sensitive Fet'S (Ph Isfet'S)
(Article)
Subject:
Drift
,
Hydration
,
Instability
,
Isfet
Author:
Shahriar
Jamasb
S.
Collins
Rosemary L.
Smith
page:
1239
-
1245
A Transistor Performance Figure-Of-Merit Including The Effect Of Resistance And Its Application To Scaling To Sub-0.25 Cmos Logic Technologies
(Article)
Subject:
Cmos
,
Gate Resistance
,
Silicide
Author:
A.
Chatterjee
Ih-Chin
Chen
Mark
Rodder
page:
1246
-
1252
Gate Engineering For Deep-Submicron Cmos Transistors
(Article)
Subject:
Amorphous Semiconductor
,
Boron Penetration
,
Semiconducters
Author:
Bin
Yu
Dong-Hyuk
Ju
Chenming
Hu
page:
1253
-
1262
Gate-Overlapped Lightly Doped Drain Poly-Si Thin-Finilm Transiston For Large Area Amlcd
(Article)
Subject:
Polycrystalline Silicon
,
Thin-Film Transistors
Author:
Kwon-Young
Choi
Jong-Wook
Lee
Min-Koo
Han
page:
1272
-
1279
A Low Thermal Budget Self-Aligned Ti Silicide Technology Using Germanium Implantation For Thin-Film Sol Mosfet'S
(Article)
Subject:
Cmos
,
Silicide
,
Soi
Author:
Ping
Liu
Tommy C.
Hsiao
Jason C. S.
Woo
page:
1280
-
1286
Ultra-Low-Power And High-Speed Sige Base Bipolar Transistors For Wireless Telecommunication Systems
(Article)
Subject:
Bipolar Transistors
,
Heterojunctions
Author:
Masao
Kondo
Katsuya
Oda
Hiromi
Shimamoto
page:
1287
-
1294
High Performance Of Silicided Silicon-Sidewall Source And Drain (S4d) Structure
(Article)
Subject:
High Performance
,
Source
,
Structural
Author:
Takashi
Yoshitomi
Masanobu
Saito
Tatsuya
Ohguro
H
Iwai
page:
1295
-
1299
On The Retention Time Distribution Of Dynamic Random Access Memory (Dram)
(Article)
Subject:
Retention
,
Dynamic Random
,
Access Control
Author:
Takeshi
Hamamoto
S
Sugiura
Shunichi
Sawada
page:
1300
-
1309
Practical Accuracy Analysis Of Some Existing Effective Channel Length And Series Resistance Extraction Methods For Mosfet'S
(Article)
Subject:
Effectice Channel Length
Author:
Serge
Biesemans
Marton
Hendriks
Kristin De
Meyer
page:
1310
-
1316
A Novel Single-Device Dc Method For Extraction Of The Effective Mobility And Source-Drain Resistances Of Fresh And Hot -Carrier Degraded Drain-Resistances Of Fresh And Hot-Carrier Degraded Drain-Engineered Mosfet'S
(Article)
Subject:
Hot Carrier
,
Mobility
,
Mosfet
,
Reliability
Author:
Choon-Leong
Lou
Wai-Kin
Chin
Yang
Pan
page:
1317
-
1323
Analysis Of The Mos Transistor Based On The Self-Consistent Solution To The Schrodinger And Poisson Equations And On The Local Mobility Model
(Article)
Subject:
Modeling
,
Mosfets
,
Numerical Analysis
,
Semiconductor Device Modeling
Author:
Tomasz
Janik
Bogdan
Majkusiak
page:
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