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Magazine Name : Ieee Transactions On Electron Devices

Year : 1998 Volume number : 45 Issue: 06

Aquasi-Two-Dimensional Hemt Model For Dc And Microwave Simulation (Article)
Subject: Hemt , Microwave , Modeling , Simulation
Author: Ranjit Singh      Christopher M. Snowden     
page:      1165 - 1169
On The Possible Effects Of Algaasb Growth Parameters On The 2-Deg Concentration In Algaasb/Ingaasb/Algaasb Qw'S (Article)
Subject: Compound Semiconductors , Modfet , Quantum Wells , Semiconductor Heterojunctions
Author: A F M Anwar      R T Webster     
page:      1170 - 1175
Single-Voltage-Supply Highly Efficient E/D Dual-Gate Pseudomorphic Double-Hetero Hemt'S With Platinum Buried Gates (Article)
Subject: Dual Gate , Fet'S , Hpa
Author: Takuma Tanimoto      Isao Ohbu      Satoshi Tanaka     
page:      1176 - 1182
Gaas Gate Hjfet'S Fabricated Using Two-Step Dry-Etching And Selective Mombe Growth Techniques (Article)
Subject: Crystals , Modfets , Plasma , Processing Application
Author: Shigeki Wada      Naoki Furuhata      Tadashi Maeda     
page:      1183 - 1189
Thermal Behavior Depending On Emitter Finger And Substrate Configurations In Power Heterojunction Bipolar Transistors (Article)
Subject: Power Heterojunction Bipolar Transistors , Thermal Analysis , Thermal Resistance
Author: Chang-Woo Kim      Norio Goto      Kazuhiko Honjo     
page:      1190 - 1195
High Efficiency And High Linearity Ingap/Gaas Hbt Power Amplifiers Matching Techniques Of Source And Load Impedance To Improve Phase Distortion And Linearity (Article)
Subject: Adjacent Channel Leakage Power , Linearity , Phase Distribution , Power Amplifier
Author: Taisuke Iwai      S Ohara      Hiroshi Yamada      Y Yamaguchi     
page:      1196 - 1200
1/F Noise In Ingaas/Gaas Linear Graded Buffer Layers (Article)
Subject: Buffer Layer , Dislocation , Grain Boundaries , Scattering
Author: Juan Francisco Valtuefia      Jose Antonio Garrido      Jose Ignacio Izpura     
page:      1201 - 1206
Avalanche Multiplication In Galnp/Gaas Single Heterojunction Bipolar Transistors (Article)
Subject: Avalanche Breakdown , Gallium Compounds , Transistor Array , Semiconductors
Author: Richard M. Flitcroft      J P R David      Peter A. Houston     
page:      1207 - 1212
Effects Of Inelastic Scattering On Interband Tunneling In Gasb/Alsb/Inas Broken-Gap Interband Tunneling Structures (Article)
Subject: Effects Of Initial F- Concentration , Tunneling , Broken Bars
Author: Maochang Liu      Yeong-Her Wang      Mau-Phon Houng     
page:      1213 - 1218
Low-Frequency Noise Properties Of Selectively Dry Etched Inp Hemt'S (Article)
Subject: Modfets , Indium Materials/Devices , Noise
Author: Halit C. Duran      Lin Ren      Marc Iiegems     
page:      1219 - 1225
A Detailed Phsical Model For Ion Implant Induced Damage In Silicon (Article)
Subject: Implant-Induced Damage , Ion Implantation , Modeling
Author: Charles M. Snell      Marc Iiegems      Geng Wang     
page:      1226 - 1238
A Physical Model For Threshold Voltage Instability In Si3n4-Gate H -Sensitive Fet'S (Ph Isfet'S) (Article)
Subject: Drift , Hydration , Instability , Isfet
Author: Shahriar Jamasb      S. Collins      Rosemary L. Smith     
page:      1239 - 1245
A Transistor Performance Figure-Of-Merit Including The Effect Of Resistance And Its Application To Scaling To Sub-0.25 Cmos Logic Technologies (Article)
Subject: Cmos , Gate Resistance , Silicide
Author: A. Chatterjee      Ih-Chin Chen      Mark Rodder     
page:      1246 - 1252
Gate Engineering For Deep-Submicron Cmos Transistors (Article)
Subject: Amorphous Semiconductor , Boron Penetration , Semiconducters
Author: Bin Yu      Dong-Hyuk Ju      Chenming Hu     
page:      1253 - 1262
Gate-Overlapped Lightly Doped Drain Poly-Si Thin-Finilm Transiston For Large Area Amlcd (Article)
Subject: Polycrystalline Silicon , Thin-Film Transistors
Author: Kwon-Young Choi      Jong-Wook Lee      Min-Koo Han     
page:      1272 - 1279
A Low Thermal Budget Self-Aligned Ti Silicide Technology Using Germanium Implantation For Thin-Film Sol Mosfet'S (Article)
Subject: Cmos , Silicide , Soi
Author: Ping Liu      Tommy C. Hsiao      Jason C. S. Woo     
page:      1280 - 1286
Ultra-Low-Power And High-Speed Sige Base Bipolar Transistors For Wireless Telecommunication Systems (Article)
Subject: Bipolar Transistors , Heterojunctions
Author: Masao Kondo      Katsuya Oda      Hiromi Shimamoto     
page:      1287 - 1294
High Performance Of Silicided Silicon-Sidewall Source And Drain (S4d) Structure (Article)
Subject: High Performance , Source , Structural
Author: Takashi Yoshitomi      Masanobu Saito      Tatsuya Ohguro      H Iwai     
page:      1295 - 1299
On The Retention Time Distribution Of Dynamic Random Access Memory (Dram) (Article)
Subject: Retention , Dynamic Random , Access Control
Author: Takeshi Hamamoto      S Sugiura      Shunichi Sawada     
page:      1300 - 1309
Practical Accuracy Analysis Of Some Existing Effective Channel Length And Series Resistance Extraction Methods For Mosfet'S (Article)
Subject: Effectice Channel Length
Author: Serge Biesemans      Marton Hendriks      Kristin De Meyer     
page:      1310 - 1316
A Novel Single-Device Dc Method For Extraction Of The Effective Mobility And Source-Drain Resistances Of Fresh And Hot -Carrier Degraded Drain-Resistances Of Fresh And Hot-Carrier Degraded Drain-Engineered Mosfet'S (Article)
Subject: Hot Carrier , Mobility , Mosfet , Reliability
Author: Choon-Leong Lou      Wai-Kin Chin      Yang Pan     
page:      1317 - 1323
Analysis Of The Mos Transistor Based On The Self-Consistent Solution To The Schrodinger And Poisson Equations And On The Local Mobility Model (Article)
Subject: Modeling , Mosfets , Numerical Analysis , Semiconductor Device Modeling
Author: Tomasz Janik      Bogdan Majkusiak     
page:      - - -